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RF MEMS电容式开关结构层释放技术

Xinghai ZHAO,Yuping LI,Yingbin ZHENG, Yang GAO, Xiaohui JIA

Chinese Journal of Sensors and Actuators（2012）

Cited 2|Views2
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Abstract
研究了RF MEMS开关的制造工艺流程和聚酰亚胺牺牲层的去除工艺.在开关的设计和加工中采用在信号线两侧的地线上生长一层绝缘介质层,直流偏置线生成在绝缘介质层之上,与桥的锚点相连接,实现了交直流隔离.讨论了干法刻蚀和湿法刻蚀牺牲层技术.干法刻蚀容易造成绝缘介质层的刻蚀和损伤.采用湿法刻蚀结合临界点干燥技术,可以获得理想的微梁结构.通过测试,开关样品的下拉电压为34 V～40 V,下拉距离为(1.7±0.2)μm,满足设计要求.
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Key words
Capacitive switch,Polyimide sacrificial layer,Releasing,RF MEMS
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