Design and Analysis of fT-Doubler-Based RF Amplifiers in SiGe HBT Technology
ELECTRONICS(2020)
Abstract
For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an f(T)-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 mu m SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.
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Key words
extreme-environment electronics,f(T) doubler,heterojunction bipolar transistor (HBT),radio-frequency amplifier (RFA),silicon-germanium (SiGe),through-silicon-via (TSV)
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