分子电镀法制备~(232)Th靶
Annual Report of China Institute of Atomic Energy（2008）
Abstract
<正>为满足测定232Th(α,2n)234U反应截面的需求,需在2μm和8μm厚的Al衬底上制备232Th的薄靶,要求靶厚100～200μg/cm2,不均匀性小于5%。为此,本工作采用分子电镀法,研究并选
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