太阳电池及其应用技术讲座(二) 太阳电池的原理和性能
Renewable Energy Resources(2007)
Abstract
<正>1 p-n结如图1(a)所示,使一块n型半导体和一块p型半导体紧密地接触。交界处n区一侧的电子浓度高,形成一个要向p区扩散的正电荷区域;同样,p区一侧的空穴浓度高,形成一个要向n区扩散的负电荷区域。n区和p区交界面两侧的正、负电荷薄层区域,称之为“空间电荷区”,即p-n结,如图1(b)所示。
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