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金属离子掺杂的TiO2-SiO2增透膜的制备及性能

Electronic Components and Materials(2010)

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Abstract
为了得到高增透的TiO2-SiO2薄膜,采用sol-gel法制备了金属离子掺杂的TiO2-SiO2薄膜,并对其透射光谱和薄膜厚度进行了表征,研究了退火温度及不同金属离子掺杂(Al3+、Fe3+和Zn2+)对TiO2-SiO2薄膜增透性能的影响.结果表明:Al3+、Fe3+可提高薄膜在可见光波段的增透性,其中,掺杂Al3+的摩尔分数为0.4%的薄膜,未经退火处理的增透性能最佳(透射率可达98%).掺杂Fe3+使薄膜的截止波长红移量最大,约为14 nm.
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Key words
TiO2-SiO2 thin film,AR coating,sol-gel method,metal ion doping
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