Electron beam doping of nitrogen into ternary system of ZnCdS epilayer
Materials Letters(1996)
摘要
The electron beam doping (EBD) of nitrogen (N) into an epilayer of the ZnCdS system grown on a GaAs substrate was investigated. The surface of Zn-Cd-S was covered by an overlayer of zincnitride (Zn3N2) (t ≈ 1 mm) and the overlayer surface was irradiated with high-energy electrons. The concentration profiles of N atoms in the epilayer were measured by using secondary-ion-mass spectrometry (SIMS) and showed an exponential decay curve. Their exponential decay ranges from the surface of the epilayer to a depth of ≈ 60 Å.
更多查看译文
关键词
MOCVD growth,ZnCdS epilayer,Electron beam doping,Zincnitride,Nitrogen doping
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要