Electron beam doping of nitrogen into ternary system of ZnCdS epilayer

The electron beam doping (EBD) of nitrogen (N) into an epilayer of the ZnCdS system grown on a GaAs substrate was investigated. The surface of Zn-Cd-S was covered by an overlayer of zincnitride (Zn3N2) (t ≈ 1 mm) and the overlayer surface was irradiated with high-energy electrons. The concentration profiles of N atoms in the epilayer were measured by using secondary-ion-mass spectrometry (SIMS) and showed an exponential decay curve. Their exponential decay ranges from the surface of the epilayer to a depth of ≈ 60 Å.