V-band high-efficiency monolithic pseudomorphic HEMT power amplifiers

C. K. Pao,G. L. Lan,C. S. Wu,Igawa, A., M. Hu, J. C. Chen,Y. C. Shih

Microwave and Guided Wave Letters, IEEE （1992）

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摘要

V-band monolithic power amplifiers have been developed and demonstrate state-of-the-art performance. For a single-stage MMIC amplifier employing a 200- mu m pseudomorphic HEMT, 151.4 mW (757 Mw/mm) output power with 26.4% power-added efficiency at 60 GHz is achieved. Maximum power-added efficiency of 30.6% at 130-mW output power is also obtained. A three-stage MMIC amplifier utilizing the same devices demonstrated 80-mW output power, 20.5% power-added efficiency, and 17-dB associated gain at 57 GHz. The linear gain of the amplifier was 21.5 dB.<>

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关键词

MMIC,field effect integrated circuits,high electron mobility transistors,microwave amplifiers,power amplifiers,17 dB,20.5 to 30.6 percent,200 micron,21.5 dB,57 GHz,60 GHz,80 to 151.4 mW,EHF,MM-wave type,MMIC,V-band,monolithic power amplifiers,power amplifiers,pseudomorphic HEMT,three-stage type,two-stage type

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