Substrate-strained Silicon Technology: Process Integration [CMOS Technology]

HCH Wang,YP Wang,SJ Chen,CH Ge,SM Ting,JY Kung,RL Hwang,HK Chiu,LC Sheu,PY Tsai,LG Yao,SC Chen,HJ Tao,YC Yeo,WC Lee,C Hu

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST（2003）

引用 49|浏览22

关键词

CMOS integrated circuits,elemental semiconductors,integrated circuit manufacture,leakage currents,oscillators,silicon,1.2 V,6.5 ps,60 nm,Si CMOS technology process integration,Si-SiGe,manufacturability,off state leakage,ring oscillator speed,self-heating effect,strained Si/SiGe heterostructure,substrate-strained silicon technology

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