Design Of High-Speed Master-Slave D-Type Flip-Flop In Inp Dhbt Technology

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES(2002)

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摘要
In this paper, we present some design problems of high-speed master-slave D-type flip-flop (XIS D-FF). Essential to the long-haul optical-fiber communication systems, this circuit is critical since it operates at the highest clock frequency for a given bit rate. We discuss specific aspects of electrical design of such a circuit and underline some important points for the layout of gigabit circuits. In particular, we tackle the problem of ringing, which can appear in emitter-follower structures using the fast transistors necessary for high-speed operation. We have pointed out also some difficulties of circuit layout, particularly certain connections that can cause serious ill functioning. The MS D-FF was fabricated in our self-aligned. InP double-heterojunction-bipolar-transistor technology. On-wafer characterizations at 40 Gb/s. show 75 % horizontal and 68 % vertical eye opening.
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关键词
bipolar integrated circuits, flip-flops, indium compounds, SONET, very high-speed integrated circuits
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