Near-ideal InAs QDs on GaAs substrates for 1.3–1.5m laser applications

1.3-1.5 mu m Quantum dot (QD) lasers on GaAs substrates demonstrate near-ideal device parameters. Pseudomorphic 1.3 mu m InAs-GaAs QD lasers demonstrate low threshold current density (J(th)(300K) < 100 A/cm(2)), high differential efficiency (eta(diff) > 80%), and low losses (alpha < 1.5 cm(-1)) - all realized in the same device. Characteristic temperature for the threshold current is similar to 170K up to 70 degrees C. Reduced linewidth enhancement factor is advantageous for low-chirp operation and makes it possible to suppress completely beam. lamentation up to stripe widths similar to 100 mu m. GaAs-based 1.3 mu m QD vertical-cavity surface-emitting lasers (VCSELs) with 8 mu m oxide aperture emit up to 2mW single mode continuous wave (CW) optical power. Metamorphic 1.5 mu m QD lasers on GaAs substrates with high quantum efficiency (eta(diff) > 60 - 70%) and low losses (alpha < 3-4 cm(-1)) and operating at power levels beyond 7W are fabricated.