Excitonic absorption in InGaP/GaAs multiquantum wells

G. A. Patrizi,H. Y. Lee,M. J. Hafich,Silvestre, P.,G. Y. Robinson

Electronics Letters （1991）

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摘要

Multiquantum well p-i-n photodiodes have been fabricated using InGaP/GaAs grown by gas-source MBE. The room temperature photocurrent spectrum of the diodes exhibits strong excitonic absorption at wavelengths near 860 nm, and a large change in the photocurrent is observed with applied bias.

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关键词

III-V semiconductors,electroabsorption,gallium arsenide,gallium compounds,indium compounds,p-i-n diodes,photodiodes,semiconductor quantum wells,860 nm,InGaP-GaAs,MQW,PIN diodes,excitonic absorption,gas-source MBE,multiquantum wells,p-i-n photodiodes,room temperature photocurrent spectrum

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