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Reduction of space charge recombination current with a self passivated GaAlAs/GaInP/GaAs HBT structure

R Bourguiga, JF Palmier,C DubonChevallier

Journal De Physique Iii（1997）

Cited 3|Views1
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Abstract
A Passivated HBT structure which includes a thin GaInP layer between the GaAlAS emitter and the GaAs base layer has been proposed in order to reduce surface and space charge recombination current, while keeping a low p-type ohmic contact resistivity. The optimization of the GaInP layer thickness has been carried out leading to a value of 30 nm.
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Key words
ohmic contact,space charge
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