A 1/2.7-in 2.96 MPixel CMOS Image Sensor With Double CDS Architecture for Full High-Definition Camcorders

IEEE Journal of Solid-State Circuits(2007)

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摘要
A 1/2.7-in 1944 times 1484 pixel CMOS image sensor with double CDS architecture fabricated in a 0.18-mum single-poly triple-metal (1P3M) CMOS process is described. It operates at 48 MHz in a progressive scanning mode at 60 frames/s for full high-definition (HD) imaging. Two transistors/pixel architecture and low optical stack with double microlenses achieve 14.6 ke macr/1times ldr s sensitivity an...
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关键词
CMOS image sensors,Video equipment,Optical noise,Pixel,CMOS process,High definition video,Optical imaging,Stimulated emission,Optical saturation,Optical sensors
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