Electrochemical characterization of silicon electrodes: Part 1: Capacitance-Voltage Method

This paper is devoted to the discussion of capacitance-voltage curves obtained with Si-H/Hg, Si/SiO2/Hg and Si-H/HClO4 (aq) interfaces for different frequencies and their interpretation via the Mott-Schottky relation. The aim is to get physical parameters from the electrical behaviour of these interfaces. The best conditions for application of the Mott-Schottky relationship are discussed: potential range, one-frequency or multi-frequencies measurements of the capacitance, measurements in the presence of an oxide layer. All the theoretical considerations are illustrated by experiments performed with p-silicon. The Mott-Schottky plots were studied in the case of p-semiconductor in the presence of a perchloric acid solution or in contact with mercury. An oxide layer chemically prepared on the silicon surface may be responsible for the shift of the inversion potential.