Rf Reactive Sputtering Of Indium-Tin-Oxide Films

Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar + O 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 + N 2 ambients. The ITO films exhibited low resistivity ∼2 × 10 −4 Ω cm , high transmittance ∼90% in the visible spectral region and high reflectance ∼80% in the near infra-red region.