GaSb crystals pulled from non-stoichiometric solution at constant temperature

In order to obtain GaSb bulk crystals with a controlled residual acceptor concentration, the solute-feeding Czochralski method was applied to the pulling from Ga-rich and Sb-rich solutions at various constant temperatures. Photoluminescence and electrical properties were homogeneous throughout the whole of the grown crystal, and varied from sample to sample according to the Sb content of the growth solution, impling native-defect dependence.