X-波段AlGaN/GaN HEMT 功率MMIC
Research & Progress of SSE Solid State Electronics（2007）
Abstract
AlGaN/GaN高电子迁移率晶体管(HEMT)以其高输出功率密度、高电压工作和易于宽带匹配优势将成为下一代高频固态微波功率器件.
MoreKey words
algan/gan hemt power mmics,x-band
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