High-Power Compact Laser-Plasma Source for X-ray Lithography
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS(2002)
摘要
A compact laser-produced plasma X-ray source that radiates 1 nm X-rays with an average power of 24 W in 2pi steradians is presented. The X-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped. solid-state Nd:YAG laser system. The X-ray source was used to demonstrate X-ray lithography of 75nm lines. The X-ray source is optimized for integration with an X-ray stepper to provide a complete X-ray lithography exposure tool for the manufacture of high-speed GaAs devices.
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关键词
X-ray source,X-ray lithography,laser plasma,diode-pumped solid-state laser,GaAs semiconductor devices
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