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应用高压高功率的微晶硅薄膜高速沉积

赵之雯,刘玉岭

Journal of Optoelectronics.Laser（2011）

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Abstract
应用高压高功率(hphP)甚高频等离子增强化学气相沉积(VHF-PECVD)法对微晶硅(μc-Si:H)进行高速沉积,确定了hphP VHF-PECVD法沉积μc-Si:H的最优条件参数,在此参数下对hphP和低压低功率(IplP)两组样品沉积速率、光电导、暗电导及光敏性等性能参数进行测试,得到了1.58 nm的较高沉积速率、光电性能优秀和更适合应用在薄膜太阳能电池生产上的μc-Si:H薄膜材料.
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Key words
high rate deposition,high pressure and high power(hphP) VHF-PECVD,microcrystalline silicon(μc-Si:H) thin film
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