Non-Volatile Memories Using Srbi2ta2o9 Ferroelectrics

INTEGRATED FERROELECTRICS（1997）

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摘要

Ferroelectric non-volatile memories (FENVM) are fabricated using spin-coat and fire deposition of the SrBi2Ta2O9 layered perovskite ferroelectric. Test memories using a 2 transistor-2 capacitor bit cell, top contacts to capacitors and single level metal were fabricated. We report here on the integration and electrical characteristics of fully functional 1 Kbit test memories.

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关键词

ferroelectric, non-volatile memory, process integration

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