Analysis of the local indium composition in ultrathin InGaN layers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY(2007)
Abstract
Experimental photoluminescence (PL) spectra and structural properties of the ultrathin InGaN insertions in an AlGaN matrix grown on a sapphire substrate were investigated. The PL emission mechanism was shown to be governed by the quantum dot (QD)-like indium-rich areas with size about 3 nm, which was determined from high resolution transmission electron microscopy image analysis. The local indium composition in QDs of the samples was estimated as about 26% using the suggested model of PL transition energy, which accounts for quantum confinement energy, spontaneous and piezoelectric fields.
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Key words
quantum dot,image analysis,quantum confinement,high resolution transmission electron microscopy
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