A progressive scan CCD image sensor for DSC applications

Solid-State Circuits, IEEE Journal of(2000)

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摘要
A progressive-scan CCD image sensor with a standard double-layer polysilicon is designed on a new architecture of pixel interleaved array named PIACCD. The pixel layout is estimated to enlarge the saturation voltage by 1.3 times and heighten the sensitivity with the 1.4 times enlarged equilateral aperture opened above each photodiode. The three-dimensional simulation ensures that the unique electrode pattern layout has an advantage to accelerate the signal charge transfer. The pixel interleaved array heightens the resolution by 2/sup 1/2/ times in comparison with that of the same pixel number ITCCD in horizontal and vertical directions. The resolution characteristics fit to the fine pattern sensitivity of the human eye and the power spectrum distributions of nature scenes. The fabricated sensor, which has 2.4 Mpixels with 4.52 /spl mu/m/sup 2/ pixel size, has provided the 1.3 times sensitivity and the dynamic range of 71 dB. The reproduced image has verified the resolution of PIACCD 1.4 times higher than that of the same pixel number ITCCD.
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关键词
CMOS image sensors,arrays,cameras,image resolution,integrated circuit layout,2.4 Mpixel,PIACCD,Si,digital still camera applications,electrode pattern layout,equilateral aperture,pixel interleaved array,pixel layout,progressive scan CCD image sensor,resolution characteristics,standard double-layer polysilicon,three-dimensional simulation
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