Low-driving-current temperature-stable 10 Gbit∕s operation of p-doped 1.3 [micro sign]m quantum dot lasers between 20 and 90°C
ELECTRONICS LETTERS(2007)
Abstract
Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 mu m-long short cavity 1.3 mu m p-doped quantum dot lasers. Driving conditions were 25.2 mA(p-p) for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90 degrees C.
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