Vapor-phase epitaxy of InxGa1−xN using chloride sources

The growth kinetics of InxGa1−xN epitaxial layer on GaN-buffer/sapphire (0001) substrate and the vapor–solid distribution relationship of the chloride source system are investigated. The growth rate decreases with increasing growth temperature. The solid composition of epitaxial layers becomes more GaN-rich with the increasing growth temperature and is very sensitive to the H2 mole reaction in the carrier gas. In the vapor–solid distribution relationship, the preferential incorporation of the GaN component is observed. The indium droplets are not observed on the surface of InxGa1−xN films in the entire composition range. Without In droplets formation, the In-rich InxGa1−xN alloys as high as 0.8 of In content are obtained.