Molecular Beam Epitaxially Grown HgTe and HgCdTe-on-Silicon for Space-Based X-Ray Calorimetry Applications

P. Dreiske,M. Carmody,C. H. Grein,J. Zhao, R. Bommena, C. A. Kilbourne,R. Kelley,D. McCammon, D. Brandl

Journal of Electronic Materials(2010)

引用 6|浏览6
暂无评分
摘要
ys of x-ray microcalorimeters will enable broadband, high-resolution x-ray spectroscopy to study and substantiate black holes, dark matter, and other celestial phenomenon. At EPIR we continue to achieve growth of high-quality, low-doped, single-crystal HgCdTe, and HgTe epilayers on Si and CdZnTe to be employed by NASA in these instruments. Excellent low-temperature heat capacities (with no significant electronic term) have been demonstrated in integrated devices, with both HgTe and HgCdTe showing improvement over the HgTe used previously. Goal resolutions ≤4 eV have been achieved with good yield for both HgTe and HgCdTe.
更多
查看译文
关键词
heat capacity,black hole,dark matter,single crystal,x ray spectroscopy,molecular beam epitaxy
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要