Transport properties of delta-doped Si:Sb superlattices

Delta-doped Si(100):Sb superlattices with period varying from 1.5 to 100 nm have been characterized by resistivity and Hall-effect measurements. Extremely high mean electron concentrations up to 8 x 10(20) cm-3 and electron mobilities exceeding the values for uniformly-doped bulk Si by a factor of about two have been achieved in short-period superlattices.