Dependence of oriented BN films on Si(100) substrate temperature

The effects of substrate temperature (Tsub) of Si(100) on the orientation of hexagonal Boron Nitride (h-BN) films synthesized using magnetron sputtering and Plasma-Enhanced CVD (PECVD) were studied, respectively. It was observed that higher Tsub could result in the growth of (0002) oriented h-BN films and improve the crystallinity of the films, in contrast the films with the c-axis basically parallel to the surface at lower ones. A tentative explanation on the mechanism of the orientation characteristic is suggested, under the integration of compressive stress due to ion bombardment and desorption from thermal excitation.