A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique

IEEE Journal of Solid-State Circuits(2005)

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摘要
We demonstrated a 90-GHz InP-HEMT lossy match amplifier (LMA) with a 20-dB gain for the first time. We obtained this performance with the power consumption of 220 mW, which is the smallest one ever reported for an over 80-GHz broadband amplifier. The amplifier acts as a C-R coupled amplifier in the low to medium frequency range and as an L-C match amplifier at the high frequencies. Therefore, this configuration provides both high gain and wide bandwidth. The key to achieve a 90-GHz bandwidth is broadband matching in the L-C match amplifier. In this paper, we propose a broadband matching technique with a low Q network and describe the design guideline for the excellent performance.
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iii-v semiconductors,high electron mobility transistors,indium compounds,millimetre wave amplifiers,wideband amplifiers,20 db,220 mw,90 ghz,c-r coupled amplifier,inp,inp-hemt lossy match amplifier,l-c match amplifier,broadband amplifier,broadband matching technique,low q network,q factor
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