SiC Nanowires Synthesized by Microwave Heating

Large-scale silicon carbide nanowires are prepared by pure silicon powder and phenolic resin, which are mixed, molded, carbonizated, and then subjected to the microwave heating with a rate of 10 degrees C/min between 1300 and 1400 degrees C in the static argon atmosphere for 0.5 similar to 2h. The patterns of the SiC nanowires are characterized by means of SEM, the composition of the samples are determined through EDX. The prepared nanowires have the diameters between 20 to 100nm. The current results imply that liquid silicon can act as a catalyzer during the formation of SiC nanowires.