Spin-Polarized Quasiparticle Injection Into Ybco

FET-type devices have been fabricated by using trilayers of Nd0.7Sr0.3MnO3 (NSMO) or LaNiO3 (LN) (gate)/LnAlO(3) (LAO) (barrier) / Yba(2)Cu(3)O(7) (YBCO) (channel) in order to investigate effect of quasiparticle injection into YBCO. Here, NSMO and LNO were used as gate electrodes for injection of spin-polarized and spin-unpolarized quasiparticles into the superconducting channel, respectively. When injecting along the c-axis of YBCO, the critical current was suppressed with spin-polarized quasiparticles 30 times more efficiently than,vith spin-unpolarized quasiparticles. Differential current gain, defined as a differential change of the critical current to injection current change, has been achieved up to similar to 16 for c-axis YBCO. If the response time is limited by quasiparticle relaxation time of similar to 10 ps, the device may be useful for fast electronics. Preliminary high-speed measurements Indicate that part of the critical current suppression may be caused by quasiparticle injection, not all by heating. When injecting along a-axis, no significant dependence on quasiparticle polarization was observed. Other superconductors such as Pr1.85Ce0.15CUO4 (PCCO) and PbIn have been tested in similar devices for comparison.