An X-Band Rf-Input Outphasing Power Amplifier

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS(2018)

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Abstract
This work presents an RF-input outphasing power amplifier ( RFIO PA) operating at X-band. A simple passive "inphasing" network implemented with PIN diodes is described that produces the required phase- and amplitude-modulated signals needed to drive an existing outphasing PA MMIC. The approach eliminates the need for multiple modulated input signals to drive the outphasing PA, particularly important at X-band where phased-array applications demand low-complexity PA solutions.The proof-of-concept X-band RFIO PA is demonstrated using pulsed CW signals to have a peak drain efficiency of 63% at 35.05 dBm output power. Dynamic performance is characterized using modulated RADAR signals for enhanced spectral confinement with 10 mu s pulse duration and 100 mu s repetition period, and achieves -10 dB improvement on the first sidelobe of the spectrum when digital predistortion is applied. Average efficiency of the RFIO PA is measured at 51.8% for a conventional rectangular RF pulse and 18.3% for an amplitude-modulated pulse with raised-cosine profile.
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Key words
power amplifiers, X-band, outphasing, DPD
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