Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices

An analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices is developed for the first time in this paper. Using the model, an equation for the threshold Voltage is derived in terms of the design and fabrication process parameters. The values of the threshold voltage predicted by the analytical equation are found to be in excellent agreement with those extracted from numerical simulations and experimental measurements on both silicon and silicon carbide devices. The analysis in this paper is therefore useful in choosing the design and fabrication process parameters required to tailor the threshold voltage of Accumulation Channel MOS-Gate bipolar and unipolar devices. (C) 1998 Elsevier Science Ltd. All rights reserved.