In-Plane Dielectric Properties Of Epitaxial Ba(Zr0.3ti0.7)O-3 Thin Film Grown On Lsat (001) Single Crystal Substrate

Ba(Zr0.3Ti0.7)O-3 (BZT) thin film was deposited on (LaAlO3)0.3(Sr2AlTaO6)(0.35) [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr0.3Ti0.7)O-3 thin film was characterized as a function of frequency (1 kHz-500 MHz), temperature (125 K-373 K) and dc electric field (0-13.3 V/mu m) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 73%-50% at room temperature in the frequency range of 1 kHz to 500 MHz, showing the potential of our Ba(Zr0.3Ti0.7)O-3 thin film to be used in microwave devices.