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GaAs(110)量子阱的电子自旋弛豫

Liu Linsheng,Liu Su,Wang Wenxin,Zhao Hongming,Liu Baoli,Gao Hanchao,Jiang Zhongwei,Wang Jia,Chen Hong,Zhou Junming

Chinese Journal of Semiconductors（2007）

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Abstract
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构.对样品进行了低温光致发光谱和时间分辨光致发光谱的测量,结果表明激发功率和激发波长对室温下量子阱内电子的自旋弛豫时间有强烈的影响.对于常见的GaAs(100)量子阱起支配作用的D'yakonov-Perel'(DP)自旋弛豫机制,在GaAs(110)量子阱材料里被充分地抑制了.对于缺失了DP相互作用的GaAs(110)多量子阱,电子-空穴相互作用对自旋弛豫时间随激发功率变化有重要的影响.
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Key words
molecular beam epitaxy,multiple quantum wells,electron spin relaxation
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