Kinetics Of Vapor-Phase Electrolytic Deposition Of Yttria-Stabilized Zirconia Thin Films

The kinetic aspects of the vapor-phase electrolytic deposition (VED) process are discussed. This new technology, which is similar to the electrochemical vapor deposition process, is based on electrolytic deposition using a glow-discharge plasma as the conductive medium. After reaction for 2 h at a de current density of 2.82 mA cm(-2), a uniform cubic fluorite yttria-stabilized zirconia (YSZ) layer containing about 8 mol % Y2O3 about 7 mu m thick was deposited. The thickness of the deposited layer was directly proportional to the reaction time, indicating that the VED process is consistent with Faraday's law. In VED, the deposition rate of YSZ depends on the O-2 flux (the de current density) through the YSZ layer.