Reactive ion etching of zinc oxide (ZnO) in SiCl4 based plasmas

E. Mastropaolo,A. M. Gundlach,C. Fragkiadakis,P. B. Kirby,R. Cheung

Electronics Letters（2007）

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摘要

The reactive ion etching (RIE) of zinc oxide (ZnO) in a silicon tetrachloride (SiCl4) based plasma has been studied. The etching rates have been found to increase by decreasing the chamber pressure, by adding argon (Ar) to SiCl4 or by increasing the RIE power density. These observations suggest the importance of the presence of ion bombardment on the surface in the etching me...

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关键词

chlorine compounds,micromechanical devices,photoresists,piezoelectric transducers,resonators,silicon compounds,sputter etching,zinc compounds

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