Strain state in semiconductor quantum dots on surfaces: a comparison of electron microscopy and finite element calculations

The strain distribution in InP quantum dots, coherently grown on a GaInP substrate, was determined by image analysis of high-resolution electron microscopy images. Image simulations were used to verify the obtained results. The measured strain values were compared with values obtained from finite element calculations, using the dot shape determined by electron microscopy. The measured and calculated strain values are in good agreement, supporting the use of finite element calculations for strain determination in quantum dots. (C) 1998 Elsevier Science B.V. All rights reserved.