Electron beam epitaxy of alloy semiconductors

It was investigated that, when an Al evaporated layer on a GaP (GaAs, GaAs1−y P y ) substrate was bombarded with total fluences of 0.1−1.0 × 1018 electrons cm−2 at 7 MeV and at 50°C, a thin heteroepitaxial layer of Al x Ga1−x P (Al x Ga1−x As, Al x Ga1−x As1−y P y ) crystal was grown on S-doped (111), (100) and (110) GaP [(110) Cr, O-doped GaAs, (100) Te-doped GaAS1−y P y ] substrates. Evidence for the creation of the epilayers before annealing was obtained from measurements using an X-ray diffractometer, an X-ray photoelectron spectrometer, a reflection high-energy electron diffractometer, a transmission electron microscope and a scanning transmission electron microscope. In the case of Al/GaP, the epitaxial layers of Al∼0.25Ga∼0.75P, Al∼0.5Ga∼0.5P and Al∼0.75Ga∼0.25P were grown on (111), (100) and (110) GaP substrates, respectively. Their compositions did not vary with the total electron fluence.