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SiC(0001)面和(000-1)面CMP抛光对比研究

Zhang-Jie Pan,Bin Feng, Lei Wang,Jian-min Hao

Equipment for Electronic Products Manufacturing（2013）

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Abstract
研究了SiC衬底(0001)面和(000-1)面不同的CMP抛光特性。分别采用pH值为10.38和1.11的改性硅溶胶抛光液对SiC衬底的(0001)Si面和(000-1)C面进行对比抛光实验。使用精密天平测量晶片抛光前后的质量,计算出CMP抛光工艺的材料去除速率。并使用强光灯、微分干涉显微镜和原子力显微镜检测晶片表面质量。发现采用酸性抛光液和碱性抛光液进行抛光,均有VC>VSi;而对于(0001)Si面,有VSi酸>VSi碱;对于(000-1)C面,有VC酸>VC碱。该结论对于探索最佳碳化硅的CMP抛光工艺具有较高价值。
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Key words
(0001)Si face,Material remove rate,(0001)C face,Silicon Carbide,Roughness,Chemical Mechanical Polish(CMP)
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