Engineering and metrology of epitaxial graphene

Solid State Communications(2011)

Cited 23|Views35
No score
Abstract
Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.
More
Translated text
Key words
A. Graphene,D. Quantum Hall effect,D. Photochemical gate,E. Metrology
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined