Innovative process flow to achieve carbon nanotube based interconnects
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE(2008)
摘要
We have achieved down to 140 nm diameter carbon nanotube via interconnects with both new single and dual damascene processes on 200 mm, silicon wafers. High density 5 x 10(10) nanotube/cm(2) is obtained. The validity of these two new processes has been checked by performing electrical measurements. At high bias, a low resistance of 20 Omega has been reached for a 300 nm diameter via interconnect. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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关键词
carbon nanotube,innovation process
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