Schottky barrier formation for passivated semiconductor surfaces
APPLIED SURFACE SCIENCE(1996)
摘要
The effect on the Schottky barrier height of H-monolayer passivation of the Si(111) surface is explored. In our calculations we have analyzed K/Si(111) interfaces (theta = 1/3 ML) with and without a H interlayer. Our results show that the effect of passivation is to reduce the Schottky barrier height, phi(bn), by 0.23 eV. Comparison is made with previous results on passivated GaAs(110) surfaces.
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关键词
schottky barrier
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