Fractal dimension analysis of polyacenic semiconductive (PAS) materials

The fractal dimensions D of the pristine and the Li-doped polyacenic semiconductive (PAS) materials have been analyzed by small-angle X-ray scattering (SAXS) and compared with that of graphite. It has become clear that the Li doping generally makes D smaller, which suggests fixation effect of the nanopores on the surface of the material by the doped Li atoms. It is pointed out that the fractal dimension analysis affords an alternative picture to the conventional N2 adsorption and rather new technique using 129Xe nuclear magnetic resonance method in discussion of the surface structures for general amorphous carbon particularly when it is doped or mixed with binders.