Numerical Simulation of LEC Growth of GaAs with a Double Crucible

Numerical simulation of the flow and heat and mass transport of GaAs melt in the liquid encapsulant czochralski growth of GaAs single crystal in a double crucible was carried out using the low-Reynolds number κ-e turbulence model.The effects of crystal rotation rate,inner and outer crucible rotation rate on the flow fields were analyzed.The mass distribution of Si dopant in the GaAs melt was obtained in the case of concenring the dopant segregation effect. The results show that: the isotherms near the melt/crystal interface tend to be flat and intensive with increasing crystal rotation rate;the isotherms near the melt/crystal interface tend to be convex when increasing inner crucible rotation rate;the influence of the outer crucible rotation rate on the shape of isotherms near the melt/crystal interface is negligible;besides melt/crystal interface and the inlet of replenishing melt,Si concentration gradient mainly occurred in the pipe and its vicinity.