Influence of rta on the structures of BTO thin films and their physical properties

FERROELECTRICS(2011)

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摘要
The BTO thin films on Si(100) substrate have been prepared by hot wall MOCVD at different temperatures ranged from 400 degrees C to 750 degrees C. The influence of RTA on the structures and some physical properties of these BTO films have been studied.
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关键词
thin films,rta,bto
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