Influence of rta on the structures of BTO thin films and their physical properties
FERROELECTRICS(2011)
摘要
The BTO thin films on Si(100) substrate have been prepared by hot wall MOCVD at different temperatures ranged from 400 degrees C to 750 degrees C. The influence of RTA on the structures and some physical properties of these BTO films have been studied.
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关键词
thin films,rta,bto
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