Low resistance, unannealed ohmic contacts to n-type InAs0.66Sb0.34

Unannealed Ti/Pt/Au contacts to n-type InAs0.66Sb0.34 were fabricated and measured. Extremely low specific contact resistances down to 2.4 x 10(-8) Omega cm(2) were measured, commensurate with In0.53Ga0.47As, InAs, and In0.27Ga0.73Sb contact schemes with higher doping, which is due to the very high electron mobility in InAs0.66Sb0.34 and hypothesised pinning of the surface Fermi level within the conduction band.