HfO2薄膜的光致发光谱与激发谱
Chinese Journal of Lasers（2010）
Abstract
利用电子束蒸发和自动晶控技术制备了氧化铪薄膜,并对薄膜进行了退火处理.通过光致发光(PL)光谱、光致发光激发谱(PLE)和X射线衍射(XRD)等测试对HfO2薄膜进行表征,研究了退火对Hf02薄膜结构及发光特性的影响.室温下对薄膜进行了光致发光光谱测试发现存在4个发射峰,退火后的样品发光强度明显增强.对薄膜的激发谱测试发现激发谱与发射谱之间存在着斯托克斯位移.在退火处理后,X射线衍射表明薄膜的取向性和结晶度都明显提高,但是薄膜的激光损伤阈值(LIDT)没有变化.
MoreTranslated text
Key words
hafnia thin films,structure defect,photoluminescence and photoluminescence excitation,thin films,laser-induced damage threshold,X-ray diffraction
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined