Analysis Of Snapback Phenomena In Vdmos Transistor Having The High Second Breakdown Current: A High Esd Mechanism Analysis
IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING(2009)
Abstract
We proposed the balanced vertical double - diffused MOS (B-VDMOS) transistor. The B-VDMOS transistor is not destroyed by avalanche breakdown and acquires the high second breakdown current. Owing to the high second breakdown current, the B-VDMOS transistor has high electrostatic discharge (ESD) robustness. This paper presents the mechanism of the snapback phenomena and clarifies the cause that the B-VDMOS transistor has the high second breakdown current. We find the cause that current does not become concentrated even after avalanche breakdown in the B-VDMOS transistor. (C) 2009 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
MoreTranslated text
Key words
ESD, BiC-DMOS, VDMOS, snapback, avalanche breakdown
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined