InGaAs enhancement-mode MISFETs using double-layer gate insulator

Electronics Letters（1982）

引用 20|浏览2

暂无评分

摘要

In this letter we describe the fabrication of enhancement-mode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 μm gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of ...

查看译文

关键词

gallium arsenide,III-V semiconductors,indium compounds,insulated gate field effect transistors,interface electron states,liquid phase epitaxial growth

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要