Energy Levels Of Valence Subbands In Si/Si1-Xgex Quantum Well By Admittance Spectroscopy
Chinese Physics Letters(2000)
Abstract
Using the admittance spectroscopy technique, energy levels of subbands in SiGe/Si quantum well are studied. The value of activation energy increases with increasing well width, in accordance with the quantum confinement effect. Two conductance peaks due to hole emission from heavy hole ground state and light hole ground state were observed. It was found that the value of activation energy increased with annealing time st the temperature of 800 degrees C, while the activation energy decreases with the annealing time at 900 degrees C.
MoreTranslated text
Key words
ground state,energy levels,activation energy,quantum confinement,quantum well
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined